GaAs-FET Power Amplifier, 800 ... 900 MHz

KU PA 080090 - 08 A
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GaAs-FET Power Amplifier, 800 ... 900 MHz

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Specifications

Frequency range 800..900 MHz
Input power for P1dB min. 14 dBm
Output power P1dB typ. 29 dBm (CW) ; typ. 800 mW (CW)
Output power COFDM (Measured with QAM 64, single carrier, EVM: 2%) min. 23 dBm ; min. 200 mW
Gain (small signal) min. 15 dB
Gain flatness (small signal) +/-0.5 dB (typ.)
Harmonic rejection min. 28 dB @ 28.7 dBm
IM3 (Measured 2-tone, frequency spacing: 1 MHz) min. 46 dBc @ 24.7 dBm PEP
Efficiency min. 20 % @ 29 dBm (CW)
Supply voltage +12 ... 14 V DC
Current consumption typ. 0.35 A
Operating case temp. range -20 ... +55 °C
Dimensions (mm) 50 x 30 x 22
Weight 90 g (typ.)

    Product Applications

    Communications
  • Secure Communications
  • Point-to-point Communications
  • Repeaters, extenders and boosters
  • Point-to-multipoint Communications
  • Low probability of interception
  • Broadcast
  • Digital
  • Wireless backhaul
  • High Power

    Design Features

  • High linearity
    Reverse polarity protection
    Milled aluminium case
    Small mechanical dimensions
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