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Design Features
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GaAs FET technology High linearity (class A operation) Good harmonic rejection Isolator for protection against high VSWR Reverse polarity protection Monitor outputs for forward and reverse power detection (DC voltage) Adjustable ALC (automatic level control) ON / OFF control with DC voltage (ON at 5 ... 14 V)
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Frequency range
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2300..2500 MHz
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Output power P1dB
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typ. 43.8 dBm, min. 43 dBm (CW) ; typ. 24 W, min. 20 W (CW)
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Output power P3dB
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min. 44 dBm (CW) ; min. 25 W (CW)
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Output power COFDM
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min. 38.4 dBm (1) ; min. 7 W (Measured with QAM 64, single carrier, EVM: 2%)
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Gain (small signal)
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typ. 54 dB, min. 53 dB
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Gain flatness (small signal)
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typ. +/- 1 dB
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Harmonic rejection
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typ. 60 dB, min. 55 dB @ 43 dBm
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IM3 @ 40 dBm PEP
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typ. 40 dBc
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Efficiency
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min. 20 % @ 43 dBm (CW)
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Supply voltage
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+11 ... 14 V DC
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Current consumption @ P1dB
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-20 ... +55°C
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Current consumption @ P1dB
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typ. 8 A