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Design Features
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GaAs-FET-technology / High linearity / Good harmonic rejection / High bandwidth / Reverse polarity protection / Monitor output for forward power detection (DC voltage) / Small mechanical dimensions
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Frequency range
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8000 … 14000 MHz
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Input power Max.
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+20 dBm
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Output power P1dB (CW)
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min. 31.7 dBm; typ. 33 dBm
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Output power COFDM
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typ. 27 dBm / typ. 0.5 W
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Gain Small signal
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typ. 20 dB
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Gain Flatness (small signal)
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typ. +/-3 dB
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Harmonic rejection @ 33 dBm
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typ. 40 dB
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Overtemperature protection
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yes
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IM3 @ 33 dBm PEP
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typ. 20 dBc
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Supply voltage
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+9 … 14 V DC
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Current consumption @ P1dB
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max. 1.1 A
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Forward detection
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yes (Diode-Detector)
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VSWR of load
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max. 1.8:1
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Operating case temperature range
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-20 … +55 °C
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Input, Output connector / impedance
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SMA-female, 50 ohms
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Case
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milled aluminium
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Dimensions (mm)
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50 x 30 x 17
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Weight
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typ. 50 g